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October 2013
FDP047AN08A0 / FDH047AN08A0
N-Channel PowerTrench ? MOSFET
75 V, 80 A, 4.7 m Ω
Features
? R DS(ON) = 4.0 m ? (Typ.), V GS = 10 V, I D = 80 A
? Q g (tot) = 92 nC (Typ.), V GS = 10V
? Low Miller Charge
Applications
? Synchronous Rectification for ATX / Server / Telecom PS U
? Battery Protection Circui t
? Motor Drives and Uninterruptible Power Supplie s
? Low Q rr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82684
D
GD
S
TO-220
G
D
S
TO-247
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
C
Symbol
V DSS
V GS
I D
E AS
P D
T J , T STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T C < 144 o C, V GS = 10V)
Continuous (T C = 25 o C, V GS = 10V, with R θ JA = 62 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
FDP047AN08A0
FDH047AN08A0
75
± 20
80
15
Figure 4
475
310
2.0
-55 to 175
Unit
V
V
A
A
A
mJ
W
W / o C
o
Thermal Characteristics
C/W
C/W
R θ JC
R θ JA
R θ JA
Thermal Resistance Junction to Case, Max. TO-220, TO-247
Thermal Resistance Junction to Ambient, Max. TO-220 (Note 2)
Thermal Resistance Junction to Ambient, Max. TO-247 (Note 2)
0. 48
62
30
o C/W
o
o
? 2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
1
www.fairchildsemi.com
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相关PDF资料
P51-100-A-D-D-5V-000-000 SENSOR 100PSI 7/16-20 UNF 1-5V
P51-75-A-D-D-5V-000-000 SENSOR 75PSI 7/16-20 UNF 1-5V
P51-750-A-C-D-5V-000-000 SENSOR 750PSI M12-1.5 6G 1-5V
P51-500-A-C-D-5V-000-000 SENSOR 500PSI M12-1.5 6G 1-5V
P51-300-A-C-D-5V-000-000 SENSOR 300PSI M12-1.5 6G 1-5V
P51-200-A-C-D-5V-000-000 SENSOR 200PSI M12-1.5 6G 1-5V
ASEMPC-24.000MHZ-Z-T OSC 24.000 MHZ CMOS MEMS SMD
P51-100-A-C-D-5V-000-000 SENSOR 100PSI M12-1.5 6G 1-5V
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